Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs

Author

Thareja, G. ; Chopra, S. ; Adams, B. ; Patil, N. ; Ta, Y. ; Porshnev, P. ; Kim, Y. ; Moffatt, S. ; Loftis, D. ; Brennan, R. ; Goodman, G. ; Abdelrehim, I. ; Saraswat, K. ; Nishi, Y.

Author_Institution

Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2010

Firstpage

23

Lastpage

24

Abstract

For the first time, ultra shallow junctions (x_j <; 10nm) are demonstrated using Plasma Immersion Ion Implantation for both n-type and p-type dopants in Ge. High electrical activation (>1×10²⁰ cm^-3) is achieved for all dopant atoms (P/As/Sb/B) using Laser Thermal Processing. We also show ultrathin (0.6nm), high quality GeO₂ interfacial layer for gate dielectric, which provides substrate orientation independent D_it and mobility enhancement for Ge high-k N/P MOSFETs.

Keywords

MOSFET; antimony; arsenic; boron; dielectric materials; dielectric thin films; electron mobility; elemental semiconductors; germanium; germanium compounds; laser materials processing; phosphorus; plasma immersion ion implantation; semiconductor doping; Ge:As; Ge:B; Ge:P; Ge:Sb; GeO₂; GeO₂ interfacial layer; MOSFET; dopant activation; gate dielectric; laser thermal processing; n-type dopant; p-type dopant; plasma immersion ion implantation; ultrashallow junction; High K dielectric materials; Logic gates; MOSFET circuits; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551970

Filename

5551970