• DocumentCode
    1629986
  • Title

    Surface Tunneling Currents in Reverse Biased Narrow Bandgap P-N Junction

  • Author

    Adar, R.

  • Author_Institution
    Department of Electrical Engineering, Technion - Israel Institute of Technology
  • fYear
    1989
  • Firstpage
    1
  • Lastpage
    4
  • Keywords
    Current measurement; Electric breakdown; Insulation; Metal-insulator structures; P-n junctions; Photonic band gap; Predictive models; Semiconductor diodes; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineers in Israel, 1989. The Sixteenth Conference of
  • Type

    conf

  • DOI
    10.1109/EEIS.1989.720011
  • Filename
    720011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1629986