DocumentCode
1630052
Title
Polarization-engineered N-face III–V nitride quantum well LEDs
Author
Verma, Jai ; Simon, John ; Protasenko, Vladimir ; Xing, Grace ; Jena, Debdeep
Author_Institution
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear
2010
Firstpage
227
Lastpage
228
Abstract
In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Electroluminescence from AlGaN regions indicates that AlχGai.χN QWs and AlyGaι.yN barriers can now be used to obtain respectable emission intensities for deeper UV or higher energy photons. A number of advantages of N-face optoelectronic devices p-type polarization doping, and better electron and hole injection facilitated by the correct orientation of the polarization field were pointed out.
Keywords
III-V semiconductors; electroluminescence; light emitting diodes; semiconductor doping; semiconductor quantum wells; AlGaN; III-V nitride quantum well; N-face optoelectronic device; N-face polarization-doped quantum well; QW UV LED; electroluminescence; electron injection; energy photon; hole injection; p-type polarization doping; Aluminum gallium nitride; Face; Gallium nitride; Gold; Light emitting diodes; Optical polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551987
Filename
5551987
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