DocumentCode
1630312
Title
Mass production of quartz high-speed chemical etching applied to AT-cut wafers
Author
Watanabe, Takaya
Author_Institution
World Technol. Instrum. Co. Ltd, Yokohama, Japan
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
368
Lastpage
375
Abstract
The phenomenon in which etch pits and etch channels did not generate the required etching rate of an AT-cut quartz crystal wafer by carrying out etching at a rate lower than the growth speed of crystal was discovered. The high-speed chemical etching process examined, including lapping to polishing of the crystal wafers, was performed in less than 4 minutes. As a condition for which a mirror surface is possible, the ultra-clean washing method of removing contamination of the crystal wafer before etching was shown to be an important element. The manufacturing process for carrying out batch processing of the crystal wafer of #2000 finish after cutting by this high-speed chemical etching was shown, and mass production was made possible. The high-speed chemical etching. method is applied also to 2 μm thickness thin crystal wafer production used at higher operating frequencies
Keywords
crystal resonators; electron device manufacture; etching; quartz; surface cleaning; 4 min; AT-cut quartz crystal wafer; SiO2; contamination removal; etch channels; etch pits; etching speed; high-speed chemical etching; manufacture process; mass production; mirror surface; ultra-clean washing method; Chemical elements; Chemical processes; Chemical products; Etching; Frequency; Lapping; Manufacturing processes; Mass production; Mirrors; Surface contamination;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International
Conference_Location
Seattle, WA
ISSN
1075-6787
Print_ISBN
0-7803-7028-7
Type
conf
DOI
10.1109/FREQ.2001.956251
Filename
956251
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