A 0.13µm CMOS 2.3∼2.9GHz Direct-Conversion WiMAX/LTE transmitter with novel gain control

Author

Zhang, Weifeng ; Huang, Jiwei ; Fang, Min ; Li, Zhengping ; Fang, Zhijian

Author_Institution

Guangzhou Runxin Inf. Technol. Co. Ltd., Guangzhou, China

fYear

2010

Firstpage

719

Lastpage

721

Abstract

A 0.13μm CMOS Direct-Conversion WiMAX/LTE transmitter with novel binary modulation gain control scheme and wide frequency band coverage is presented. In this work, binary modulation gain control realizes 36dB gain control at baseband frequency instead of by RF VGA at RF frequency. Output power is +0.5dBm and calculated EVM is 1.8%. A 4^th order Butterworth low pass filter supports 2MHz~12MHz, 7-step corner frequency control, and 30dB, -1dB/step gain control. The transmitter supports 2.3GHz~2.9GHz band. Total current consumption is 135mW with 1.2V/2.8V supply included RF DA, up-mixer, low pass filter, LO divider and buffer.

Keywords

Butterworth filters; CMOS integrated circuits; Long Term Evolution; UHF mixers; WiMax; buffer circuits; frequency control; gain control; low-pass filters; low-power electronics; modulation; radio transmitters; 4^th order Butterworth low pass filter; 7-step corner frequency control; CMOS direct-conversion WiMAX transmitter; EVM; LO divider; RF VGA; binary modulation gain control; buffer; direct-conversion LTE transmitter; frequency 2.3 GHz to 2.9 GHz; size 0.13 mum; up-mixer; wide frequency band coverage; Baseband; Computer architecture; Frequency modulation; Gain control; Radio frequency; Transmitters; Binary Modulation Gain Control; Direction-Conversion; RF Transmitter; WiMAX/LTE;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667388

Filename

5667388