High efficiency wideband envelope tracking power amplifier with direct current sensing for LTE applications

Author

Kwak, Myoungbo ; Jeong, Jinseong ; Hassan, Muhammad ; Yan, Jomei J. ; Kimball, Donald F. ; Asbeck, Peter M. ; Larson, Lawrence E.

Author_Institution

Univ. of California at San Diego, La Jolla, CA, USA

fYear

2012

Firstpage

41

Lastpage

44

Abstract

A high efficiency wideband envelope tracking power amplifier for LTE applications is presented. The CMOS envelope amplifier with direct current sensing has a measured average efficiency of 78% with a 5 MHz LTE signal. The envelope tracking power amplifier including a GaAs HBT RF stage has overall power added efficiency (PAE) above 46% with an average LTE output power of 27.6 dBm and a gain of 26.5 dB.

Keywords

CMOS integrated circuits; Long Term Evolution; gallium arsenide; heterojunction bipolar transistors; power amplifiers; CMOS envelope amplifier; GaAs HBT RF stage; LTE applications; direct current sensing; high efficiency wideband envelope tracking power amplifier; power added efficiency; CMOS integrated circuits; Power amplifiers; Power generation; Radio frequency; Switches; Wideband; Envelope tracking; LTE; RF power amplifiers; envelope amplifier; high efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1119-0

Type

conf

DOI

10.1109/PAWR.2012.6174933

Filename

6174933