Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects

This paper introduces a full nonlinear compact equivalent circuit model (ECM) for a 10 W Gallium Nitride (GaN) high electron-mobility transistor (HEMT). The model accounts for low-frequency dispersion of both transconductance and output conductance by use of gate and drain filter networks applied to GaN for the first time. Other features of the model include an excellent fit of modelled drain-current to high-power pulsed-IV (P-IV) measurements up to 60 V across a range of quiescent points, using a single function drain-current equation. Global S-parameter fits across the bias plane have also been extracted. Large-signal harmonic sweeps are presented, showing a good fit to measured data over a range of bias points.