A single-in-differential-out CMOS RF front-end for UWB 6–9GHz applications

Author

Zhou, Feng ; Li, Wei ; Gao, Ting ; Lan, Fei ; Li, Ning ; Ren, Junyan

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

fYear

2010

Firstpage

743

Lastpage

745

Abstract

An integrated ultra-wideband CMOS RF front-end for UWB 6-9 GHz application is presented in this paper. A single-in-differential-out gain controllable low noise amplifier and a current-reuse bleeding IQ merged quadrature mixer are integrated as the RF front-end. This ESD protected module is implemented in TSMC 0.13μm RF CMOS process and the post-layout simulation results shows that it achieves a high voltage gain of 23.7-25.1dB and a low voltage gain of 10-12.4dB, an averaged total noise figure of 4.6-5.1dB while operating in the high gain mode and an in-band IIP3 of -6.7dBm while the low gain mode. This RF front-end consumes 22.4mA from a 1.2V supply voltage.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; field effect MMIC; low noise amplifiers; ultra wideband communication; TSMC; current 22.4 mA; current-reuse bleeding; frequency 6 GHz to 9 GHz; gain 10 dB to 12.4 dB; gain 23.7 dB to 25.1 dB; low noise amplifier; noise figure 4.6 dB to 5.1 dB; quadrature mixer; single-in-differential-out gain; size 0.13 mum; ultrawideband CMOS RF front-end; voltage 1.2 V; Gain; Hemorrhaging; Indium phosphide; Mixers; Noise; Noise figure; Radio frequency; CMOS; Ultra-wideband (UWB); current-reuse bleeding; low noise amplifier (LNA); quadrature mixer; single-in-differential-out;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667400

Filename

5667400