DocumentCode
1630700
Title
Modeling anomalous collector current behavior in gated lateral bipolar transistors
Author
Joardar, Kuntal ; Ford, Jenny
Author_Institution
Motorola, Mesa, AZ, USA
fYear
1993
Firstpage
193
Lastpage
196
Abstract
An improved analytical model for lateral bipolar transistors is described that allows reproduction of anomalous effects often observed in lateral bipolar junction transistors (BJTs) arising from the presence of the gate electrode and a nonuniform doping profile in the base. The model also includes hybrid mode operation of the lateral BJT. Results obtained from this model are compared with 2-D numerical device simulations and measurements
Keywords
bipolar transistors; 2-D numerical device simulations; Gummel plot; PISCES; anomalous collector current behavior; gated lateral bipolar transistors; hybrid mode operation; model; nonuniform doping profile; pnp transistor; Bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617496
Filename
617496
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