Extraction procedure for emitter series resistance contributions in SiGeC BiCMOS technologies

Author

Stein, Fridtjof ; Huszka, Zoltan ; Derrier, N. ; Maneux, Cristell ; Celi, D.

Author_Institution

STMicroelectron., Crolles, France

fYear

2014

fDate

24-27 March 2014

Firstpage

20

Lastpage

23

Abstract

The accurate determination of the emitter series resistance R_E has been topic for numerous investigations throughout the development of modern bipolar device technologies. A good knowledge of the parasitic resistances of the device under test is important due to the apparent voltage drops over these resistors in high current operation. Opposed to the base and collector resistance today there are no appropriate individual test structures that allow for a precise determination of the emitter resistance. In this work we present the application of a new extraction method to a recent SiGeC HBT device technology for mmW applications. The new method allows a precise parameter determination of the desired resistance values without adding additional cost for a dedicated test structure.

Keywords

Ge-Si alloys; bipolar integrated circuits; electric potential; electric resistance; heterojunction bipolar transistors; BiCMOS technologies; HBT device technology; SiGeC; base resistance; bipolar device technologies; collector resistance; device under test; emitter series resistance contributions; extraction method; parasitic resistances; voltage drops; Data mining; Electrical resistance measurement; Frequency measurement; Geometry; Heterojunction bipolar transistors; Resistance; BiCMOS; Device Modeling; Emitter Series Resistance; HBT; Parameter Extraction; RF device characterization; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2014 International Conference on

Conference_Location

Udine

ISSN

1071-9032

Print_ISBN

978-1-4799-2193-5

Type

conf

DOI

10.1109/ICMTS.2014.6841462

Filename

6841462