Understanding the switching mechanism of charge-injection GeTe/Sb2Te3 phase change memory through electrical measurement and analysis of 1R test structure

Author

Takaura, N. ; Ohyanagi, T. ; Tai, M. ; Kitamura, Masayuki ; Kinoshita, Moto ; Akita, K. ; Morikawa, T. ; Kato, Shigeo ; Araidai, M. ; Kamiya, K. ; Yamamoto, Takayuki ; Shiraishi, Kotaro

Author_Institution

Phase Change Device Res. Group, Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan

fYear

2014

fDate

24-27 March 2014

Firstpage

32

Lastpage

37

Abstract

We describe the switching mechanism of GeTe/Sb₂Te₃ phase change memory called “topological-switching Random Access Memory” (TRAM). DC sweep and AC transient analysis of the TRAM TEGs provided evidence of enhancement of atomic movement in TRAM by charge injection. A hysteresis loop of resistance that was characteristic to TRAM, fast threshold switching of 4 ns by electron injection, and MLC capabilities by hole generation were revealed for the first time.

Keywords

antimony compounds; charge injection; germanium compounds; phase change memories; semiconductor superlattices; transient analysis; 1R test structure analysis; AC transient analysis; DC sweep analysis; GeTe-Sb₂Te₃; TRAM TEGs; atomic movement enhancement; charge-injection phase change memory; electrical measurement; electron injection; fast threshold switching; hole generation; switching mechanism; time 4 ns; topological-switching random access memory; Phase change materials; Random access memory; Resistance; Switches; Threshold voltage; Voltage measurement; Charge Injection enhancement; GeTe/Sb2Te3 superlattice; TRAM (Topplogical switching RAM);

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2014 International Conference on

Conference_Location

Udine

ISSN

1071-9032

Print_ISBN

978-1-4799-2193-5

Type

conf

DOI

10.1109/ICMTS.2014.6841464

Filename

6841464