DocumentCode
1631150
Title
The properties of SiC in comparison with Si semiconductor devices
Author
Vaculik, Petr
Author_Institution
ENET - Energy Units for Utilization of non Traditional Energy Sources, VSB - Tech. Univ. of Ostrava, Ostrava, Czech Republic
fYear
2013
Firstpage
1
Lastpage
4
Abstract
The SiC - silicon carbide MOSFET has exclusive features thanks its become better switch than Si - silicon semiconductor switch. There are some special features that need to be understood for use to in full devices potential. The advantages and differences of SiC MOSFETs have been described in this article in compare with Si IGBT transistor.
Keywords
MOSFET; elemental semiconductors; insulated gate bipolar transistors; semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; Si; Si IGBT transistor; SiC; silicon carbide MOSFET; silicon semiconductor switch; Insulated gate bipolar transistors; Logic gates; MOSFET; Schottky diodes; Silicon; Silicon carbide; Driver; IGBT; MOSFET; SBD; Si; SiC;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Electronics (AE), 2013 International Conference on
Conference_Location
Pilsen
ISSN
1803-7232
Print_ISBN
978-80-261-0166-6
Type
conf
Filename
6636538
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