A single-photon avalanche diode test chip in 150nm CMOS technology

Author

Pancheri, Lucio ; Dalla Betta, Gian-Franco ; Huf Campos Braga, Leo ; Hesong Xu ; Stoppa, David

Author_Institution

DII, Univ. of Trento, Trento, Italy

fYear

2014

fDate

24-27 March 2014

Firstpage

161

Lastpage

164

Abstract

The design of Single-Photon Avalanche Diode (SPAD) arrays requires a clear understanding of the correlation between the device characteristics and the geometrical and structural device parameters. This work presents a test chip, fabricated in a 150-nm CMOS technology, tailored to the extraction of the main features for SPADs of different shapes and sizes. Statistical results on breakdown voltage, Dark Count Rate and Photon Detection Probability are reported and discussed.

Keywords

CMOS integrated circuits; avalanche photodiodes; electric breakdown; integrated circuit testing; photodetectors; CMOS technology; SPAD arrays; breakdown voltage; dark count rate; photon detection probability; single-photon avalanche diode arrays; single-photon avalanche diode test chip; size 150 nm; CMOS integrated circuits; CMOS technology; Feature extraction; Photonics; Semiconductor device measurement; Shape; Size measurement; CMOS technology; Photodetector; Single-Photon Avalanche Diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2014 International Conference on

Conference_Location

Udine

ISSN

1071-9032

Print_ISBN

978-1-4799-2193-5

Type

conf

DOI

10.1109/ICMTS.2014.6841486

Filename

6841486