Ten kilowatt self-commutated resonant inverter using MOS controlled thyristors

Author

Jones, Franklin ; Kerfoot, Charles ; Kemerer, Ray ; Carter, Charles

Author_Institution

Westinghouse Electron. Syst. Group, Baltimore, MD, USA

fYear

1990

Firstpage

659

Lastpage

667

Abstract

A 50 kHz full-bridge series/parallel resonant inverter has been developed to provide a 10 kW high-voltage output from 270 V DC input power. The inverter uses MOS controlled thyristors as self commutated switches. Multilayer ceramic chip capacitors and gapped ferrite planar inductors serve as resonant elements to allow high power density. The design, computer simulation, and breadboard evaluation of the inverter are described.<>

Keywords

commutation; insulated gate field effect transistors; invertors; thyristor applications; 10 kW; 270 V; 50 kHz; MOS controlled thyristors; breadboard evaluation; computer simulation; full-bridge inverter; gapped ferrite planar inductors; high power density; input power; multilayer ceramic chip capacitors; resonant elements; self commutated switches; self-commutated resonant inverter; series/parallel resonant inverter; Ceramics; Computer simulation; Ferrites; Inductors; MOS capacitors; Nonhomogeneous media; Resonance; Resonant inverters; Switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1990. APEC '90, Conference Proceedings 1990., Fifth Annual

Conference_Location

Los Angeles, CA, USA

Type

conf

DOI

10.1109/APEC.1990.66366

Filename

66366