Multipactor discharge on a dielectric

Summary form only given. This paper reports a novel theory of a single-surface multipactor discharge on a dielectric, such as an rf window. Using a Monte Carlo simulation, we obtain the susceptibility diagram, applicable to a wide range of materials, in terms of the rf electric field and of the DC electric field that may result from dielectric charging. The electron multiplication mechanism assumes realistic yield curves of secondary electrons, including distributions of emission velocities and angles for these electrons. The susceptibility diagram thus constructed allows an immediate assessment of the range of rf power over which multipactor may be expected to occur. A simple analytic theory is constructed to explain the simulation results. We next evaluate the rf power deposited on a dielectric window by multipactor and the saturation mechanisms. A simple model is incorporated into the Monte Carlo simulation that accounts for beam loading on the external rf, as well as the evolution of the DC electric field due to dielectric charging.