DocumentCode
1632380
Title
A 2.14 GHz, 0.78 dB noise figure CMOS low noise amplifier
Author
Pienkowski, Dariusz ; Circa, Radu ; Boeck, Georg
Author_Institution
Microwave Eng. Group, Technische Univ. Berlin
fYear
2005
Firstpage
27
Lastpage
30
Abstract
This work presents a 2 GHz LNA designed for UMTS mobile terminals. The circuit is implemented in a 0.13 mum CMOS technology. In design methodology small signal and noise parameters of the amplifier are combined, and pad capacitance is used for improving the noise performance. The designed amplifier shows 0.78 dB noise figure and 12 dB gain at 2.14 GHz for 3.5 mA supply current and 1.2 V supply voltage
Keywords
3G mobile communication; CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; capacitance; electric current; electric potential; low noise amplifiers; mobile handsets; 0.78 dB; 1.2 V; 2 GHz; 2.14 GHz; 3.5 mA; CMOS low noise amplifier; UMTS mobile terminals; noise figure; noise parameters; pad capacitance; signal parameters; supply current; supply voltage; 3G mobile communication; CMOS technology; Capacitance; Circuit noise; Current supplies; Design methodology; Gain; Low-noise amplifiers; Noise figure; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Technology, 2005. The European Conference on
Conference_Location
Paris
Print_ISBN
2-9600551-1-X
Type
conf
DOI
10.1109/ECWT.2005.1617646
Filename
1617646
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