A 90W S-band high power amplifier for broadband wireless applications

Author

Matsunaga, K. ; Shimawaki, H.

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan

Volume

1

fYear

2003

Firstpage

73

Abstract

This paper describes a successfully developed 90W high power amplifier with the wide band range in S-band. The power amplifier consists of two 50W GaAs FET chips and small 180 degrees coupler transmission line circuit that was developed in an external matching network. The wide band performance was achieved by the 180 degrees coupler transmission line circuit and the multi-stage internal circuit. The power amplifier delivered an output power of 90W in the frequency range of 2.9 to 3.3 GHz. To our knowledge, this is the highest power and frequency range ever reported in S-band. A low 3rd-order intermodulation distortion (IM3) of less than -30 dBc was also achieved at a 10 dB back-off point from saturation power in the frequency range of 2.9 to 3.4 GHz. The developed power amplifier is suitable for the base station in broadband wireless access in the S-band.

Keywords

III-V semiconductors; field effect transistor circuits; gallium arsenide; intermodulation distortion; microwave power amplifiers; mobile radio; wideband amplifiers; 180/spl deg/ coupler transmission line circuit; 2.9 to 3.3 GHz; 90 W; GaAs; GaAs FET chip; S-band high power amplifier; base station; broadband wireless access; external matching network; multi-stage internal circuit; third-order intermodulation distortion; Broadband amplifiers; Coupling circuits; Distributed parameter circuits; FETs; Frequency; Gallium arsenide; High power amplifiers; Power amplifiers; Power generation; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210886

Filename

1210886