RF characteristics of a high voltage LDMOSFET

Author

Hu, C.M. ; Hung, C.Y. ; Gong, J.

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2010

Firstpage

920

Lastpage

922

Abstract

Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed in this paper. The simulated results of this LDMOS RF switch exhibit excellent agreement to the measured data over the frequency range from DC to 3GHz. Based on this small signal LDMOSFET model, advantageous RF IC applications with LDMOS technology could be realized.

Keywords

CMOS integrated circuits; power MOSFET; radiofrequency integrated circuits; CMOS technology; LDMOSFET; RF switching circuit; RFIC; power handling capability; series resistance; stack-transistor structure; Frequency measurement; Integrated circuit modeling; Logic gates; Mathematical model; Radio frequency; Resistance; Scattering parameters; RF LDMOS; RF switch; parameter extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667479

Filename

5667479