A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3

Author

van der Heijden, M.P. ; Spirito, M. ; de Vreede, L.C.N. ; van Straten, F. ; Burghartz, J.N.

Author_Institution

Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands

Volume

1

fYear

2003

Firstpage

235

Abstract

A 2GHz single-stage linear InGaP HBT differential driver amplifier is presented operating at I/sub C/ = 30mA and V/sub C/ = 3V. The amplifier utilizes a collector-base capacitance neutralization technique, yielding a maximum stable gain of 30dB at 2GHz. Furthermore, second-harmonic control is implemented in the in- and output terminations yielding a 20dB reduction of third-order intermodulation distortion (IM3). Moreover, the well-defined second-order terminations result in a good symmetry of the lower and upper IM3 side bands.

Keywords

III-V semiconductors; UHF amplifiers; UHF integrated circuits; bipolar MMIC; differential amplifiers; driver circuits; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; 2 GHz; 3 V; 30 dB; 30 mA; IP3; InGaP; collector-base capacitance neutralization; high-gain differential HBT driver amplifier; input terminations; maximum stable gain; output terminations; second-harmonic control; second-order terminations; symmetry; third-order intermodulation distortion; Capacitance; Differential amplifiers; Driver circuits; Heterojunction bipolar transistors; Intermodulation distortion; Laboratories; Linearity; MIM capacitors; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210923

Filename

1210923