Mechanical stress caused frequency drift in cryogenic sapphire resonators

Author

Chang, S. ; Mann, A.G.

Author_Institution

Bliley Technol. Inc., Erie, PA, USA

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

710

Lastpage

714

Abstract

By comparing the drift rate between two nominally identical resonators, each with a choice of two closely spaced modes having a different electromagnetic configuration (E mode and H mode), it was found that variation of mechanical stress in the sapphire element induced by its mounting structure was the origin of the frequency drift of UWA 6 K sapphire oscillator reported previously. Discussions on the previously proposed mechanisms accounting for the oscillator residual frequency drift and measurement results on the relative frequency drift rate between a pair of resonators with different mechanical mounting structures are presented

Keywords

cryogenic electronics; dielectric resonator oscillators; frequency stability; microwave oscillators; sapphire; stress effects; Al₂O₃; E mode; H mode; UWA oscillator; closely spaced modes; cryogenic sapphire resonators; frequency drift; mechanical stress variation; mounting -structure; residual drift; resonant mode frequency strain dependence; short-term frequency stability; Australia; Capacitive sensors; Cryogenics; Dielectric constant; Frequency measurement; Oscillators; Resonance; Resonant frequency; Strain measurement; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International

Conference_Location

Seattle, WA

ISSN

1075-6787

Print_ISBN

0-7803-7028-7

Type

conf

DOI

10.1109/FREQ.2001.956368

Filename

956368