A 23GHz differential amplifier with monolithically integrated T-coils in 0.09/spl mu/m CMOS technology

Author

Toifl, T. ; Kossel, M. ; Menolfi, C. ; Morf, T. ; Schmatz, M.

Author_Institution

IBM Zurich Res. Lab., Ruschlikon, Switzerland

Volume

1

fYear

2003

Firstpage

239

Abstract

We present a four-stage differential amplifier using coupled inductors in a T-coil configuration to match the capacitive load to the driving transistor. The chip was fabricated in a 90 nm CMOS technology and achieves a bandwidth of 23 GHz with a differential gain of 18 dB at 1.2 V supply voltage. At 10 V supply voltage, the circuit displays a bandwidth of 23 GHz with 15 dB gain at 54 mW dissipated power.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; coupled circuits; differential amplifiers; inductors; integrated circuit design; integrated circuit measurement; integrated circuit modelling; wideband amplifiers; 1.2 V; 10 V; 15 dB; 18 dB; 23 GHz; 54 mW; 90 nm; CMOS broadband amplifiers; T-coil configuration coupled inductors; amplifier bandwidth/differential gain/supply voltage; amplifier power dissipation; driving transistor/capacitive load matching; monolithically integrated T-coils; multi-stage differential microwave amplifiers; Bandwidth; Broadband amplifiers; CMOS technology; Coupling circuits; Differential amplifiers; Displays; Inductors; Resistors; Skin effect; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210924

Filename

1210924