Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface

The impacts of drive-in annealing and ion implantation process have been experimentally analyzed for the dopant segregation method by silicide as diffusion source, which provides the design guidelines for the application of dopant segregation technique. The results illustrate that the silicide as diffusion source technique is more sensitive to the ion implantation process. By optimizing the post-implantation energy, Schottky diodes of NiSi/n-Si with large I_on/I_off ratio up to 10⁹ have been fabricated. The extracted electron Schottky barrier height increases to 0.92eV, which means a relative low hole Schottky barrier height of about 0.2eV, which is suitable for Schottky barrier source/drain PMOS fabrication.