• DocumentCode
    1635256
  • Title

    Thermally stable TaOx-based resistive memory with TiN electrode for MLC application

  • Author

    Zhang, Lijie ; Huang, Ru ; Gao, Dejin ; Pan, Yue ; Qin, Shiqiang ; Yu, Zhe ; Shi, Congyin ; Wang, Yangyuan

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1160
  • Lastpage
    1162
  • Abstract
    In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs free energy based on the TEM-analysis and comparative experiments.
  • Keywords
    ceramic capacitors; electrodes; random-access storage; thermal stability; Gibbs free energy; MLC application; RRAM device; TEM-analysis; TiN; TiN electrode; thermally stable TaOx-based resistive memory; Copper; Electrodes; Performance evaluation; Resistance; Switches; Thermal stability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667587
  • Filename
    5667587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1635256