DocumentCode
1635966
Title
Applications of tunneling FET in memory devices
Author
Zang, Song-Gan ; Liu, Xin-Yan ; Lin, Xi ; Liu, Lei ; Liu, Wei ; Zhang, David Wei ; Wang, Peng-Fei ; Hansch, Walter
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2010
Firstpage
1238
Lastpage
1240
Abstract
Because of the special p-i-n structure of the tunneling FET (TFET), many different composite transistors can be formed with careful device design by combining TFET with MOSFET. In this paper, we propose the special applications of TFET as memory devices. A novel capacitor-less DRAM cell based on floating junction gate (FJG) concept can be configured with TFET. In addition, several different memory cells containing TFET will be discussed.
Keywords
DRAM chips; MOSFET; p-i-n diodes; tunnelling; MOSFET; TFET; capacitor-less DRAM cell; composite transistor; floating junction gate; memory device; p-i-n structure; tunneling FET; Junctions; Logic gates; MOSFET circuits; Nonvolatile memory; PIN photodiodes; Random access memory; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667617
Filename
5667617
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