• DocumentCode
    1636964
  • Title

    Bonding and gap states at GaAs- oxide interfaces

  • Author

    Robertson, John

  • Author_Institution
    Eng. Dept, Cambridge Univ., Cambridge, UK
  • fYear
    2010
  • Firstpage
    1311
  • Lastpage
    1314
  • Abstract
    The nature of bonding and possible causes of Fermi level pinning at high mobility, high K GaAs:HfO2 FET interfaces is described.
  • Keywords
    Fermi level; III-V semiconductors; bonding processes; field effect transistors; gallium arsenide; hafnium compounds; Fermi level pinning; GaAs-HfO2; GaAs-oxide interface; HfO2 FET; bonding; gap state; high K GaAs; Atomic layer deposition; Gallium; Gallium arsenide; Logic gates; MOSFETs; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667649
  • Filename
    5667649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1636964