• DocumentCode
    163697
  • Title

    Modeling electrostatics of double gated monolayer MoS2 channel field-effect transistors

  • Author

    Sheredeko, Galina S. ; Zemtsov, Kirill S. ; Zebrev, Gennady I.

  • Author_Institution
    Dept. of Micro- & Nanoelectron., Nat. Res. Nucl. Univ., Moscow, Russia
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    107
  • Lastpage
    109
  • Abstract
    Analytical modeling of double gated field-effect transistor with conductive channel based on monolayer molybdenite (MoS2) is presented.
  • Keywords
    electrostatics; field effect transistors; molybdenum compounds; MoS2; conductive channel; double gated field-effect transistors; electrostatic modeling; monolayer channel field-effect transistors; monolayer molybdenite; Chemicals; Electrostatics; Field effect transistors; Logic gates; Quantum capacitance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4799-5295-3
  • Type

    conf

  • DOI
    10.1109/MIEL.2014.6842097
  • Filename
    6842097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=163697