• DocumentCode
    1637609
  • Title

    Processing material evaluation and ultra-wideband modeling of through-strata-via (TSV) in 3D integrated circuits and systems

  • Author

    Xu, Zheng ; Beece, Adam ; Zhang, Dingyou ; Chen, Qianwen ; Rose, Kenneth ; Lu, James Jian-Qiang

  • Author_Institution
    Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2010
  • Firstpage
    1802
  • Lastpage
    1804
  • Abstract
    Since the conventional planar ICs encountered many physical, technological and economic bottlenecks, 3D integration by stacking and connecting function blocks in a vertical fashion is regarded as a viable approach to alleviate such bottlenecks. Through-strata-via (TSV) is one of the most attractive 3D integration solutions, which offers a massive number of short interconnects, high bandwidth, reduced delay and power consumption, heterogeneous integration, small footprint, improved yield, and reduced volume production cost. This paper reports on electrical characterizations and wideband modeling of typical TSV structures up to 100 GHz. The analysis is conducted in both the time domain and frequency domain, unveiling the impacts of processing materials on TSV electrical performance. The accurate broadband modeling approaches and results facilitate and benefit the infant 3D CAD development.
  • Keywords
    CAD; SPICE; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; power consumption; 3D CAD development; 3D integrated circuits; 3D integration solutions; TSV electrical performance; broadband modeling approach; heterogeneous integration; material evaluation; power consumption; through-strata-via; ultrawideband modeling; Conductivity; Silicon; Solid modeling; Substrates; Three dimensional displays; Through-silicon vias; 3D integration; Processing Material; TSV; Through-Strata-Via; Wideband Modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667669
  • Filename
    5667669