Compact modeling framework for multigate SOI MOSFETs based on conformal mapping techniques

A comprehensive modeling framework for 3D multigate FETs (MugFETs), applicable to FinFETs as well as gate-all-around MugFETs is presented. We use the double-gate FinFET as our reference device and solve the 2D-Laplace equation with the help of conformal mapping techniques. The 2D solution is then extended to 3D structures with the appropriate use of characteristic lengths. The results have been validated with 3D TCAD simulations from ATLAS device simulator. In addition DC-measurements on trigate SOI FinFETs for different fin width have been performed with special emphasis on the subthreshold and linear current regime behaviour. Our measured results agree reasonably well with the model.