International Electron Devices Meeting 1999. Technical Digest [Front Matter and Table of Contents]

fYear

1999

Abstract

Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.

Keywords

display devices; integrated circuit manufacture; integrated circuit modelling; integrated circuit technology; integrated circuits; micromechanical devices; monolithic integrated circuits; nanotechnology; reliability; semiconductor device models; semiconductor devices; semiconductor storage; semiconductor technology; sensors; CMOS devices; DRAM; IC manufacturing; MEMS; RF ICs; Si heterojunction devices; Si nanoscale devices; compound semiconductor devices; detectors; device characterisation; device modelling; displays; field emitters; gate dielectrics; high speed devices; high voltage TFTs; integrated circuits; interconnect reliability; junction engineering; logic technologies; memory technology; passive components; power devices; process modelling; process technology; quantum electronics; sensors; substrate engineering; system on a chip; thin gate oxide reliability; tunnelling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823833

Filename

823833