A MIM-cap free digitally tunable NMOS Pi-network

Author

Thomas, Abu ; Bakalski, W. ; Ussmueller, T. ; Weigel, Robert

Author_Institution

RF & Protection Devices, Infineon Technol., Neubiberg, Germany

fYear

2013

Firstpage

1

Lastpage

4

Abstract

A Pi-network topology using MIM-cap free digitally NMOS capacitors is demonstrated. Based on a 130 nm Bulk-CMOS process of Infineon Technologies, this circuit contains stacked transistors to vary the capacitance. It also features a direct through mode between ports to draw the minimum insertion losses of 0.36 dB at 824 MHz. The 3 capacitances can be modified from 0.2 pF to 3 pF and show a Maximum Q-factor of 90 at 900 MHz. Some additional parallel switches are added at either Input and Output to add external inductors making the circuit even more flexible. The size of the chip, including the charge pump, voltage regulator and digital MIPI control interface, is only 1600×1400 μm². The circuit draws a current of 110 μA at 3.5 V operation.

Keywords

CMOS integrated circuits; MIM devices; Q-factor; capacitors; charge pump circuits; transistors; voltage regulators; Bulk-CMOS process; Infineon Technologies; MIM-cap free digitally NMOS capacitors; MIM-cap free digitally tunable NMOS Pi-network; Pi-network topology; capacitance 0.2 pF to 3 pF; charge pump; current 110 muA; digital MIPI control interface; frequency 824 MHz; frequency 900 MHz; insertion losses; loss 0.36 dB; maximum Q-factor; size 130 nm; stacked transistors; voltage 3.5 V; voltage regulator; Capacitance; Capacitors; Impedance; Insertion loss; Radio frequency; Topology; Transistors; Antenna; PI-Network; Q-factor; adaptive matching; capacitance; transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and RF Conference, 2013 IEEE MTT-S International

Conference_Location

New Delhi

Type

conf

DOI

10.1109/IMaRC.2013.6777725

Filename

6777725