Design of monolithic 8.0–8.4GHz digitally controlled 5-bit phase shifter using MESFET process

Author

Prabhat Singh Yadav, Amit ; Arora, Vipul

Author_Institution

Solid State Phys. Lab., New Delhi, India

fYear

2013

Firstpage

1

Lastpage

4

Abstract

Design and measurements of a 5-bit monolithic digital phase shifter in frequency band of 8.0-8.4 GHz is described in the paper. 0.7 μm gate length GaAs MESFET process technology is utilized as switching device and Phase shifting networks are realized using MIM capacitors and spiral inductors. The MMIC is fabricated in chip area of 5.5 × 2.4 mm² on a 200 μm thick, 3” dia GaAs wafer. Excellent phase linearity is exhibited over differential phase range of 0-360° in digitally controlled steps of 11.25° during measurements.

Keywords

III-V semiconductors; MESFET integrated circuits; MIM devices; MMIC phase shifters; capacitors; gallium arsenide; inductors; GaAs; MESFET; MIM capacitors; frequency 8 GHz to 8.4 GHz; monolithic digital phase shifter; monolithic digitally controlled phase shifter; phase shifting networks; size 0.7 mum; size 200 mm; spiral inductors; switching device; word length 5 bit; Logic gates; MESFETs; MMICs; Phase measurement; Phase shifters; Radio frequency; Switches; MESFET; Monolithic; Phase Shifter; Switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and RF Conference, 2013 IEEE MTT-S International

Conference_Location

New Delhi

Type

conf

DOI

10.1109/IMaRC.2013.6777728

Filename

6777728