A semi-physical bipolar transistor model for the design of very-high-frequency analog ICs

Author

Rein, H.-M. ; Schröter, M. ; Koldehoff, A. ; Wörner, K.

Author_Institution

Ruhr-Univ. Bochum, Germany

fYear

1992

Firstpage

217

Lastpage

220

Abstract

A compact transistor model that is well suited for the design of very-high-frequency analog ICs and advanced narrow-emitter transistors is presented. It takes into account non-quasi-static transistor behavior and HF emitter current crowding as well as emitter-periphery and high-current effects. Modeling of the transit time, the base resistance, and the emitter junction capacitance was improved. Besides the simulation of HF analog ICs, the model proved to be well suited for simulating the switching behavior of high-speed digital ICs

Keywords

bipolar transistors; equivalent circuits; linear integrated circuits; semiconductor device models; HF emitter current crowding; VHF; analog ICs; base resistance; bipolar transistor model; emitter junction capacitance; high-current effects; high-speed digital ICs; narrow-emitter transistors; non-quasi-static transistor behavior; semiphysical compact model; simulation; switching behavior; transit time; very-high-frequency; Bipolar transistors; Capacitance; Circuit synthesis; Delay; Equivalent circuits; Geometry; Proximity effect; SPICE; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274047

Filename

274047