High-mobility, low voltage organic thin film transistors

Author

Gundlach, D.J. ; Klauk, H. ; Sheraw, C.D. ; Chung-Chen Kuo ; Jiunn-Ru Huang ; Jackson, T.N.

Author_Institution

Center for Thin Film Dev., Pennsylvania State Univ., University Park, PA, USA

fYear

1999

Firstpage

111

Lastpage

114

Abstract

We have fabricated photolithographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm/sup 2//V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

Keywords

carrier mobility; molecular electronics; organic semiconductors; photolithography; thin film transistors; -30 to 30 V; TFT performance; carrier field-effect mobility; glass substrate; high-mobility low voltage organic thin film transistors; large area electronics; low bias; organic semiconductor; pentacene; photolithographically defined organic TFTs; plastic substrate; subthreshold slope; Glass; Low voltage; Organic materials; Organic semiconductors; Organic thin film transistors; Pentacene; Polymers; Semiconductor materials; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823858

Filename

823858