• DocumentCode
    163859
  • Title

    SiC MOSFETs in automotive motor drive applications and integrated driver circuit

  • Author

    Vrtovec, R. ; Trontelj, J.

  • Author_Institution
    Lab. for Microelectron. at Fac. of Electr. Eng., Univ. of Ljubljana, Ljubljana, Slovenia
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    424
  • Lastpage
    430
  • Abstract
    Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application are presented. Furthermore, SiC MOSFET driving requirements are described and a driving concept based on a SiC integrated circuit (IC) is presented. The SiC IC is comprised of components available in recently presented target technology - SiC depletion and enhancement mode MOSFETs, polysilicon and diffusion resistors.
  • Keywords
    MOSFET; automotive electronics; driver circuits; silicon compounds; wide band gap semiconductors; SiC; automotive motor drive; blocking characteristics; conducting characteristics; diffusion resistors; enhancement mode MOSFETs; hybrid electric vehicle; integrated driver circuit; polysilicon resistors; silicon carbide MOSFETs; silicon carbide integrated circuit; silicon-based power switches; switching characteristics; thermal characteristics; Insulated gate bipolar transistors; Integrated circuits; Inverters; Logic gates; MOSFET; Silicon; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4799-5295-3
  • Type

    conf

  • DOI
    10.1109/MIEL.2014.6842182
  • Filename
    6842182