DocumentCode
163859
Title
SiC MOSFETs in automotive motor drive applications and integrated driver circuit
Author
Vrtovec, R. ; Trontelj, J.
Author_Institution
Lab. for Microelectron. at Fac. of Electr. Eng., Univ. of Ljubljana, Ljubljana, Slovenia
fYear
2014
fDate
12-14 May 2014
Firstpage
424
Lastpage
430
Abstract
Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application are presented. Furthermore, SiC MOSFET driving requirements are described and a driving concept based on a SiC integrated circuit (IC) is presented. The SiC IC is comprised of components available in recently presented target technology - SiC depletion and enhancement mode MOSFETs, polysilicon and diffusion resistors.
Keywords
MOSFET; automotive electronics; driver circuits; silicon compounds; wide band gap semiconductors; SiC; automotive motor drive; blocking characteristics; conducting characteristics; diffusion resistors; enhancement mode MOSFETs; hybrid electric vehicle; integrated driver circuit; polysilicon resistors; silicon carbide MOSFETs; silicon carbide integrated circuit; silicon-based power switches; switching characteristics; thermal characteristics; Insulated gate bipolar transistors; Integrated circuits; Inverters; Logic gates; MOSFET; Silicon; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location
Belgrade
Print_ISBN
978-1-4799-5295-3
Type
conf
DOI
10.1109/MIEL.2014.6842182
Filename
6842182
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