Modeling of pocket implanted MOSFETs for anomalous analog behavior

Author

Kanyu Mark Cao ; Weidong Liu ; Xiaodong Jin ; Vashanth, K. ; Green, K. ; Krick, J. ; Vrotsos, T. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1999

Firstpage

171

Lastpage

174

Abstract

Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects is proposed and verified against data from a 0.18 /spl mu/m technology. This model is suitable for SPICE modeling.

Keywords

CMOS analogue integrated circuits; MOSFET; SPICE; integrated circuit modelling; ion implantation; semiconductor device models; 0.18 micron; SPICE modeling; anomalous analog behavior; deep-submicron CMOS technologies; drain-induced threshold voltage shift; high-performance analog circuits; long channel devices; output resistance; physical model; pocket implanted MOSFETs; short channel effects; Analog circuits; CMOS technology; Equations; HEMTs; Implants; Laboratories; MODFETs; MOSFET circuits; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823872

Filename

823872