Modeling the small-emitter effect in polysilicon-emitter transistors

Author

Wagner, F. ; Kim, K.M. ; Nguyen, P.T. ; Saccamango, M.J. ; Cunningham, Brian ; DeVries, K. ; Ratanaphanyarat, S. ; Fischer, S.E. ; Snare, J.L. ; Lucchese, A. ; Strugazow, P. ; Peressini, P. ; Chu, S.F. ; Knepper, R.W.

Author_Institution

IBM Corp., Hopewell Junction, NY, USA

fYear

1992

Firstpage

130

Lastpage

133

Abstract

Arsenic shadowing, which is an important consideration for the small-emitter effect in bipolar polysilicon-emitter transistors, was simulated using two-dimensional process and device modeling tools. Results are compared with data for conventional and epi-base polysilicon-emitter technologies. Consideration is also given to other parameters that affect the base current. This analysis shows that the principle features of the arsenic shadowing effect can be modeled and explained by using the simulation tools. These simulations showed that the small-emitter effect was still present in the more advanced epi-base devices

Keywords

arsenic; bipolar transistors; elemental semiconductors; ion implantation; semiconductor device models; semiconductor doping; silicon; 2D process modelling tool; As shadowing; Si:As; base current; device modeling; epi-base devices; polysilicon-emitter transistors; small-emitter effect; Contamination; Current density; Geometry; Implants; Interface states; Research and development; Semiconductor materials; Shadow mapping; Shape; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274067

Filename

274067