DocumentCode
1639024
Title
Polysilicon-emitter bipolar transistors with interfacial nitride
Author
Nouri, Faran ; Scharf, Brad
Author_Institution
Analog Devices Semicond., Wilmington, MA, USA
fYear
1992
Firstpage
88
Lastpage
91
Abstract
Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors
Keywords
bipolar transistors; elemental semiconductors; reliability; semiconductor device noise; silicon; stability; Si:P; bipolar transistors; electrical reliability; interfacial nitride; noise characteristics; polysilicon emitter; thermal stability; Atomic measurements; Bipolar transistors; Electron emission; Equations; Implants; Rapid thermal processing; Reproducibility of results; Silicon; Thermal resistance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-0727-5
Type
conf
DOI
10.1109/BIPOL.1992.274077
Filename
274077
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