Thermionic emission limited recombination in phosphorus-implanted polysilicon emitters

Author

Streutker, G. ; Pruijmboom, A. ; Klaassen, D.B.M. ; Slotboom, J.W.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1992

Firstpage

50

Lastpage

53

Abstract

Bipolar transistors with P-implanted polysilicon emitters have been fabricated with high emitter efficiency and low emitter series resistance. Temperature-dependent measurements showed that the base current was limited by thermionic emission over a potential barrier of 220 MeV at the polysilicon-monosilicon interface. Due to this effective barrier, the base current was dominated by recombination in the monosilicon emitter. A model which explains the base current and its dependence on the temperature is presented. The difference between the P-doped and As-doped transistor is attributed to the fact that for the latter the base current is not limited by thermionic emission

Keywords

bipolar transistors; electron-hole recombination; elemental semiconductors; ion implantation; phosphorus; semiconductor device models; silicon; thermionic emission; 220 MeV; P-implanted polysilicon emitters; Si:P; base current; high emitter efficiency; low emitter series resistance; model; polysilicon-monosilicon interface; potential barrier; temperature dependence; thermionic emission limited recombination; Annealing; Bipolar transistors; Current measurement; Electrical resistance measurement; Iron; Laboratories; MONOS devices; Temperature dependence; Temperature measurement; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274084

Filename

274084