DocumentCode
1639311
Title
A 12.5Gbps half-rate CMOS CDR circuit for 10Gbps network applications
Author
Takasoh, Jun ; Yoshimura, Tsutomu ; Kondoh, Harufusa ; Higashisaka, Norio
Author_Institution
High Frequency & Opt. Devices Works, Mitsubishi Electr. Corp., Hyogo, Japan
fYear
2004
Firstpage
268
Lastpage
271
Abstract
This paper describes a true half-rate CMOS CDR circuit suitable for 10Gbps network applications. The CDR adopts a phase detector and a current mode EXOR charge pump with alleviated switching speeds to obtain higher speed margins. A 10.3Gbps CDR for 10Gbps Ethernet has been fabricated using 0.10 μm SOI-CMOS process technology. The measured bit error rate of the CDR is less than 10-12 with a random bit sequence of 231-1. With proposed circuit configuration, the CDR can operate over 12Gbps without error. The jitter tolerance at 10.7Gbps is more than 0.39UIpp with 4M-80MHz jitter frequency range. The input sensitivity is 16mVpp differential. The power dissipation of CDR and 1:2 Deserializer block amounts to 351 mW at a supply voltage of 1.2V.
Keywords
CMOS integrated circuits; synchronisation; timing jitter; 0.10 micron; 1.2 V; 10Gbps network applications; 12.5 Gbit/s; 12.5Gbps half-rate CMOS CDR circuit; 351 mW; 4 to 80 MHz; alleviated switching speeds; bit error rate; circuit configuration; clock and data recovery circuit; current mode EXOR charge pump; higher speed margins; jitter frequency; phase detector; random bit sequence; Bit error rate; CMOS technology; Charge pumps; Circuits; Detectors; Ethernet networks; Frequency; Jitter; Phase detection; Power dissipation;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8287-0
Type
conf
DOI
10.1109/VLSIC.2004.1346583
Filename
1346583
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