• DocumentCode
    1639311
  • Title

    A 12.5Gbps half-rate CMOS CDR circuit for 10Gbps network applications

  • Author

    Takasoh, Jun ; Yoshimura, Tsutomu ; Kondoh, Harufusa ; Higashisaka, Norio

  • Author_Institution
    High Frequency & Opt. Devices Works, Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    2004
  • Firstpage
    268
  • Lastpage
    271
  • Abstract
    This paper describes a true half-rate CMOS CDR circuit suitable for 10Gbps network applications. The CDR adopts a phase detector and a current mode EXOR charge pump with alleviated switching speeds to obtain higher speed margins. A 10.3Gbps CDR for 10Gbps Ethernet has been fabricated using 0.10 μm SOI-CMOS process technology. The measured bit error rate of the CDR is less than 10-12 with a random bit sequence of 231-1. With proposed circuit configuration, the CDR can operate over 12Gbps without error. The jitter tolerance at 10.7Gbps is more than 0.39UIpp with 4M-80MHz jitter frequency range. The input sensitivity is 16mVpp differential. The power dissipation of CDR and 1:2 Deserializer block amounts to 351 mW at a supply voltage of 1.2V.
  • Keywords
    CMOS integrated circuits; synchronisation; timing jitter; 0.10 micron; 1.2 V; 10Gbps network applications; 12.5 Gbit/s; 12.5Gbps half-rate CMOS CDR circuit; 351 mW; 4 to 80 MHz; alleviated switching speeds; bit error rate; circuit configuration; clock and data recovery circuit; current mode EXOR charge pump; higher speed margins; jitter frequency; phase detector; random bit sequence; Bit error rate; CMOS technology; Charge pumps; Circuits; Detectors; Ethernet networks; Frequency; Jitter; Phase detection; Power dissipation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8287-0
  • Type

    conf

  • DOI
    10.1109/VLSIC.2004.1346583
  • Filename
    1346583