• DocumentCode
    1640072
  • Title

    An improved negative level shifter for high speed and low power applications

  • Author

    Ying, Jianhua ; Wang, Fenghu ; Ding, Chuan ; Ji, Yonghui ; Liu, Ming

  • Author_Institution
    Dept. of Electron. Sci. & Tech., Huazhong Univ. of Sci. & Tech., Wuhan, China
  • fYear
    2010
  • Firstpage
    281
  • Lastpage
    283
  • Abstract
    An improved negative level shifter with high speed and low power consumption is presented. To reduce the switching delay and power consumption, a boost circuit is designed and additional charging current paths are introduced in the improved level shifter. The circuit has been designed in 130nm triple-well standard CMOS technology with a nominal power supply VDD of 1.5V and a negative voltage of -4.5V. Simulation results show that the switching delay and power consumption have been significantly reduced by roughly 78% and 51%, respectively, compared with the conventional negative level shifter.
  • Keywords
    CMOS integrated circuits; low-power electronics; power convertors; boost circuit design; high speed application; low power consumption; negative level shifter; size 130 nm; switching delay reduction; triple-well standard CMOS technology; voltage -4.5 V; voltage 1.5 V; Delay; Inverters; MOSFETs; Power demand; Simulation; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667758
  • Filename
    5667758