LPCVD process simulation based on Monte Carlo method

Author

Dai, Jian-Yang ; Zhou, Zai-Fa ; Huang, Qing-An ; Li, Wei-Hua

Author_Institution

Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2010

Firstpage

1907

Lastpage

1909

Abstract

Mechanisms during low pressure deposition (LPCVD) process in Micro-Electro-Mechanical Systems (MEMS) and Integrated Circuits (IC) fabrication have been analyzed. The LPCVD process has then been successfully simulated based on the re-emission models with Monte Carlo method and the Lagrangian method (shorthand denoted as L-type method) for boundary movement simulation. Simulation results show an agreement with the available experimental results. This is useful for the research of LPCVD process and the development of MEMS and IC design.

Keywords

Monte Carlo methods; chemical vapour deposition; integrated circuit manufacture; micromechanical devices; semiconductor process modelling; LPCVD process simulation; Lagrangian method; MEMS; Monte Carlo method; integrated circuits fabrication; low pressure deposition process; microelectromechanical systems; Inductors; Integrated circuit modeling; Micromechanical devices; Monte Carlo methods; Simulation; Surface treatment; L-type method; LPCVD; MEMS; Monte Carlo method; process simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667771

Filename

5667771