A voltage-dependent switching-time (VDST) model of ferroelectric capacitors for low-voltage FeRAM circuits

Author

Chow, Jeffery ; Sheikholeslami, Ali ; Cross, Jeffrey S. ; Masui, Shoichi

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2004

Firstpage

448

Lastpage

449

Abstract

The time required to switch a ferroelectric capacitor from one binary state to the other is strongly related to the magnitude of the applied voltage, especially at voltages well below the power supply. This paper presents a Verilog-A model that accurately predicts the voltage-dependent switching dynamics of various FeRAM technologies. Spectre simulations of low-voltage FeRAM circuits implemented in a 0.35 μm CMOS/PZT testchip are in full agreement with our measurement results.

Keywords

CMOS memory circuits; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; lead compounds; 0.35 μm CMOS/PZT testchip; 0.35 micron; PZT; PbZrO3TiO3; Verilog-A model; applied voltage; ferroelectric capacitors; low-voltage FeRAM circuits; voltage-dependent switching dynamics; voltage-dependent switching-time model; Circuit testing; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Power supplies; Random access memory; Switched capacitor circuits; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8287-0

Type

conf

DOI

10.1109/VLSIC.2004.1346646

Filename

1346646