• DocumentCode
    1641561
  • Title

    Evaluation the layout dependences on strained 22nm NMOSFETs

  • Author

    Qin, Jieyu ; Du, Gang ; Han, Ruqi ; Liu, Xiaoyan

  • Author_Institution
    Shenzhen Grad. Sch., Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1949
  • Lastpage
    1951
  • Abstract
    For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.
  • Keywords
    MOSFET; circuit layout; stress effects; NMOSFET; asymmetrical layout; contact position; layout dependence; mechanical stress distribution; size 22 nm; tensile stress liner; CMOS technology; Layout; Logic gates; MOSFETs; Performance evaluation; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667813
  • Filename
    5667813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1641561