DocumentCode
1641578
Title
Analysis of capacitive losses in GaN devices for an isolated full bridge DC-DC converter
Author
Ramachandran, Rakesh ; Nymand, Morten
Author_Institution
Maersk Mc-Kinney Moller Institute, University of Southern Denmark, Odense, Denmark
fYear
2015
Firstpage
467
Lastpage
472
Abstract
The paper presents the analysis of capacitive losses in GaN devices for an isolated full bridge dc-dc converter. The output capacitances of GaN device are responsible for a significant part of switching losses in a hard switched converter. Detailed knowledge of output capacitance losses is therefore important in the selection of optimum number of devices for a given power level. The analysis is performed on a 130V to 50V, 1.7 kW full bridge isolated dc-dc GaN converter operating at a switching frequency of 50 kHz. The paper also presents the measured efficiency curve of the GaN converter. The converter has attained a maximum measured efficiency of 98.7%.
Keywords
Bridge circuits; Capacitance; Gallium nitride; MOSFET; Silicon; Switches; Switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location
Sydney, Australia
Type
conf
DOI
10.1109/PEDS.2015.7203435
Filename
7203435
Link To Document