Using the ohmic resistance reverse conduction capability of MOSFETs in quasi-resonant converters

Author

Barbi, Ivo ; Martins, Denizar ; Reis, Fernando dos

Author_Institution

Lab. de Eletronica de Potencia, Univ. Federal de Santa Catarina, Brazil

fYear

1990

Firstpage

706

Lastpage

711

Abstract

A technique is proposed to eliminate the external diodes used to block the MOSFET´s parasitic antiparallel diode in full-wave-mode zero-current switching quasi-resonant converters (ZCS-QRCs). The method, which consists of using the ohmic resistance reverse conduction capability of MOSFETs for conducting the negative portion of the resonant inductor current, thus preventing it from flowing into the body diode, has been successfully employed in 300 W, 20 V buck and forward quasi-resonant converters. It has been verified that the method improves efficiency and reduces the cost, size, and weight of ZCS-QRCs. The feasibility of associating MOSFETs in parallel in ZCS-QRCs in order to increase power rating is also demonstrated.<>

Keywords

insulated gate field effect transistors; power convertors; 20 V; 300 W; MOSFET; bulk converters; forward converters; full-wave-mode; ohmic resistance reverse conduction capability; parasitic antiparallel diode; power rating; quasi-resonant converters; resonant inductor current; zero-current switching quasi-resonant converters; Costs; Diodes; Electric resistance; Immune system; Inductors; MOSFETs; Resonance; Switching converters; Voltage; Zero current switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1990. APEC '90, Conference Proceedings 1990., Fifth Annual

Conference_Location

Los Angeles, CA, USA

Type

conf

DOI

10.1109/APEC.1990.66373

Filename

66373