Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

Author

Rucker, H. ; Heinemann, B. ; Bolze, D. ; Knoll, D. ; Kruger, D. ; Kurps, R. ; Osten, H.J. ; Schley, P. ; Tillack, B. ; Zaumseil, P.

Author_Institution

Inst. for Semicond. Phys. (IHP), Frankfurt, Germany

fYear

1999

Firstpage

345

Lastpage

348

Abstract

We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

Keywords

Ge-Si alloys; carbon; diffusion; elemental semiconductors; heterojunction bipolar transistors; point defects; semiconductor doping; semiconductor materials; semiconductor process modelling; silicon; C-doped Si; C-doped SiGe; Si:C; SiGe:C; dopant diffusion; heterojunction bipolar transistor; physical model; point defect; Annealing; Bipolar transistors; Context modeling; Germanium silicon alloys; Heterojunction bipolar transistors; Physics; Semiconductor process modeling; Silicon germanium; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824166

Filename

824166