Layer structures of TiO/sub 2//Si systems by ion beam mixing

Summary form only given, as follows. We report on the layer structure phenomena existing in ion beam mixing of TiO/sub 2//Si systems. We made TiO/sub 2/ films on a monocrystalline Si (111) substrate by deposition, the Ar/sup +/ ion beam bombardment-deposition technique. The mixing area microstructures of TiO/sub 2//Si systems were observed and analyzed with scanning electron microscopy and electron probe, the results show that the mixing area appeared to have three layers due to Ar/sup +/ bombardment during preparing, and the Ti atoms of TiO/sub 2/ films implanted into the Si substrate up to 20 /spl mu/m depth by Ar/sup +/ bombarding and repositions of the Si atoms close to the surface. The results also indicated that the Ti atoms in the Si substrate were unevenly distributed in the three layers. Neutron irradiation and further Ar/sup +/ bombardment made not only the layer structures near-surface finer but also the scope of the mixing area wider.