Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

Author

King, C.A. ; Frei, M.R. ; Mastrapasqua, M. ; Ng, K.K. ; Kim, Y.O. ; Johnson, R.W. ; Moinian, S. ; Martin, S. ; Cong, H.-I. ; Klemens, F.P. ; Tang, Ronglin ; Nguyen, Donald ; Hsu, T.-I. ; Campbell, T. ; Molloy, S.J. ; Fritzinger, L.B. ; Ivanov, T.G. ; Bour

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1999

Firstpage

565

Lastpage

568

Abstract

We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with f/sub T/ of 52 GHz and f/sub max/ of 70 GHz with the addition of only 4 lithography levels over our 0.25 /spl mu/m CMOS technology without any changes to the existing process steps. Also, we demonstrate 4:1 multiplexer and 1:4 demultiplexer circuits using this technology that show excellent performance at 10 Gbit/s.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit technology; ion implantation; millimetre wave bipolar transistors; semiconductor materials; 10 Gbit/s; 52 GHz; 70 GHz; HBT; SiGe; demultiplexer circuit; graded SiGe base bipolar transistors; high energy implantation; high performance modular BiCMOS process; low cost bipolar transistors; multiplexer circuit; sub-collector region formation; super self-aligned structure; Bipolar transistors; CMOS process; CMOS technology; Circuits; Costs; Epitaxial growth; Germanium silicon alloys; Lithography; Multiplexing; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824217

Filename

824217