Half Mode Substrate Integrated Waveguide Gunn Oscillator

Author

Zhong, Cuilin ; Xu, Jun ; Yu, Zhiyuan ; Wang, Maoyan ; Zhu, Yong

Author_Institution

IEEE Conference Publishing Sch. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

Firstpage

14

Lastpage

16

Abstract

Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator´s performance is characterized by medium level output power of 13.2 dBm, phase noise less than -97.3 dBc/Hz@100 kHz and frequency excursion 40 MHz over temperature range from 10 C to 75 C. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.

Keywords

Gunn diodes; Gunn oscillators; cavity resonators; millimetre wave transistors; phase noise; semiconductor device noise; waveguide components; Gunn diode oscillator; HMSIW resonant cavity structure; half mode substrate integrated waveguide; phase noise; planar integration; temperature 10 C to 75 C; temperature-frequency stability; Diodes; Frequency; Gunn devices; Oscillators; Packaging; Performance analysis; Phase noise; Power generation; Resonance; Temperature distribution; GUNN diode; half mode substrate integrated waveguide; oscillator; resonant cavity;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves, 2008. GSMM 2008. Global Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1885-5

Electronic_ISBN

978-1-4244-1886-2

Type

conf

DOI

10.1109/GSMM.2008.4534544

Filename

4534544