• DocumentCode
    1644308
  • Title

    A 91 to 110-GHz tapered constructive wave power amplifier in a 0.12µm SiGe BiCMOS process

  • Author

    Kalantari, Nader ; Buckwalter, James F.

  • Author_Institution
    Univ. of California-San Diego, La Jolla, CA, USA
  • fYear
    2010
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    A W-band, tapered constructive wave power amplifier (TCWPA) has been designed and fabricated in a 0.12 μm SiGe BiCMOS technology. The amplifier has a 3 dB BW of 19 GHz from 91-110 GHz and a maximum gain of 12.5 dB at 101 GHz. At 98 GHz, OP1dB is 4.9 dBm. At 97 GHz, Psat is 5.9 dBm and the PAE is 7.2%. The amplifier operates from a 2.4 V supply and occupies an area of 0.22 mm2.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; BiCMOS process; SiGe; bandwidth 19 GHz; efficiency 7.2 percent; frequency 91 GHz to 110 GHz; gain 12.5 dB; size 0.12 mum; tapered constructive wave power amplifier; voltage 2.4 V; Feedback circuits; Gain; Linearity; Power generation; Power transmission lines; Resistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-8578-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.2010.5667917
  • Filename
    5667917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1644308